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Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
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Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
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School of Engineering and Materials Science
Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
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Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
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Accepted version (2.151Mb)
Volume
58
DOI
10.7567/1347-4065/ab0407
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
ISSN
0021-4922
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Authors
Christian, GM; Schulz, S; Hammersley, S; Kappers, MJ; Frentrup, M; Humphreys, CJ; Oliver, RA; Dawson, P
URI
https://qmro.qmul.ac.uk/xmlui/handle/123456789/59093
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School of Engineering and Materials Science
[2927]
Licence information
This is a pre-copyedited, author-produced version of an article accepted for publication in JAPANESE JOURNAL OF APPLIED PHYSICS. The version of record is https://iopscience.iop.org/article/10.7567/1347-4065/ab0407
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© 2019 The Japan Society of Applied Physics