dc.contributor.author | Christian, GM | en_US |
dc.contributor.author | Schulz, S | en_US |
dc.contributor.author | Hammersley, S | en_US |
dc.contributor.author | Kappers, MJ | en_US |
dc.contributor.author | Frentrup, M | en_US |
dc.contributor.author | Humphreys, CJ | en_US |
dc.contributor.author | Oliver, RA | en_US |
dc.contributor.author | Dawson, P | en_US |
dc.date.accessioned | 2019-08-13T13:26:12Z | |
dc.date.available | 2018-12-21 | en_US |
dc.date.issued | 2019-06-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.other | ARTN SCCB09 | en_US |
dc.identifier.other | ARTN SCCB09 | en_US |
dc.identifier.other | ARTN SCCB09 | en_US |
dc.identifier.uri | https://qmro.qmul.ac.uk/xmlui/handle/123456789/59093 | |
dc.relation.ispartof | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.rights | This is a pre-copyedited, author-produced version of an article accepted for publication in JAPANESE JOURNAL OF APPLIED PHYSICS. The version of record is https://iopscience.iop.org/article/10.7567/1347-4065/ab0407 | |
dc.title | Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength | en_US |
dc.type | Article | |
dc.rights.holder | © 2019 The Japan Society of Applied Physics | |
dc.identifier.doi | 10.7567/1347-4065/ab0407 | en_US |
pubs.author-url | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000474911400073&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6a | en_US |
pubs.notes | Not known | en_US |
pubs.publication-status | Published | en_US |
pubs.volume | 58 | en_US |
rioxxterms.funder | Default funder | en_US |
rioxxterms.identifier.project | Default project | en_US |