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dc.contributor.authorChristian, GMen_US
dc.contributor.authorSchulz, Sen_US
dc.contributor.authorHammersley, Sen_US
dc.contributor.authorKappers, MJen_US
dc.contributor.authorFrentrup, Men_US
dc.contributor.authorHumphreys, CJen_US
dc.contributor.authorOliver, RAen_US
dc.contributor.authorDawson, Pen_US
dc.date.accessioned2019-08-13T13:26:12Z
dc.date.available2018-12-21en_US
dc.date.issued2019-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.otherARTN SCCB09en_US
dc.identifier.otherARTN SCCB09en_US
dc.identifier.otherARTN SCCB09en_US
dc.identifier.urihttps://qmro.qmul.ac.uk/xmlui/handle/123456789/59093
dc.relation.ispartofJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.rightsThis is a pre-copyedited, author-produced version of an article accepted for publication in JAPANESE JOURNAL OF APPLIED PHYSICS. The version of record is https://iopscience.iop.org/article/10.7567/1347-4065/ab0407
dc.titleOptical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strengthen_US
dc.typeArticle
dc.rights.holder© 2019 The Japan Society of Applied Physics
dc.identifier.doi10.7567/1347-4065/ab0407en_US
pubs.author-urlhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000474911400073&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6aen_US
pubs.notesNot knownen_US
pubs.publication-statusPublisheden_US
pubs.volume58en_US
rioxxterms.funderDefault funderen_US
rioxxterms.identifier.projectDefault projecten_US


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