Browsing School of Engineering and Materials Science by Author "Humphreys, CJ"
Now showing items 1-20 of 20
-
Cavity Enhancement of Single Quantum Dot Emission in the Blue
Taylor, RA; Jarjour, AF; Collins, DP; Holmes, MJ; Oliver, RA; Kappers, MJ; Humphreys, CJ (2010) -
Effect of humidity on the interlayer interaction of bilayer graphene
Qadir, A; Sun, YW; Liu, W; Oppenheimer, PG; Xu, Y; Humphreys, CJ; Dunstan, DJ (American Physical Society, 2019-01-02)The lubricating ability of graphite largely depends on the environmental humidity, essentially the amount of water in between its layers. In general, intercalated molecules in layered materials modify their extraordinary ... -
Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]
Sun, YW; Holec, D; Gehringer, D; Fenwick, O; Dunstan, DJ; Humphreys, CJ (American Physical Society, 2021-03-01) -
Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene
Sun, YW; Holec, D; Gehringer, D; Li, L; Fenwick, O; Dunstan, DJ; Humphreys, CJ (2022) -
High-quality III-nitride films on conductive, transparent ((2)over-bar01)-oriented beta-Ga2O3 using a GaN buffer layer
Muhammed, MM; Roldan, MA; Yamashita, Y; Sahonta, S-L; Ajia, IA; Iizuka, K; Kuramata, A; Humphreys, CJ; Roqan, IS (2016-07-14) -
InGaN as a Substrate for AC Photoelectrochemical Imaging
Zhou, B; Das, A; Kappers, MJ; Oliver, RA; Humphreys, CJ; Krause, S (2019) -
Low defect large area semi-polar (11(2)over-bar2) GaN grown on patterned (113) silicon
Pristovsek, M; Han, Y; Zhu, T; Frentrup, M; Kappers, MJ; Humphreys, CJ; Kozlowski, G; Maaskant, P; Corbett, B (2015-05) -
Machine Learning Predicts Laboratory Earthquakes
Rouet-Leduc, B; Hulbert, C; Lubbers, N; Barros, K; Humphreys, CJ; Johnson, PA (2017-09-28) -
Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
Griffiths, JT; Zhang, S; Rouet-Leduc, B; Fu, WY; Bao, A; Zhu, D; Wallis, DJ; Howkins, A; Boyd, I; Stowe, D (2015-11) -
Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
Christian, GM; Schulz, S; Hammersley, S; Kappers, MJ; Frentrup, M; Humphreys, CJ; Oliver, RA; Dawson, P (2019-06-01) -
Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
Rouet-Leduc, B; Barros, K; Lookman, T; Humphreys, CJ (2016-04-26) -
Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Christian, GM; Schulz, S; Rappers, MJ; Humphreys, CJ; Oliver, RA; Dawson, P (2018-10-02) -
Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials
Sun, YW; Gehringer, D; Holec, D; Papageorgiou, DG; Fenwick, O; Qureshi, SM; Humphreys, CJ; Dunstan, DJ (2022) -
Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films.
Zhang, J; Guo, Q; Li, X; Li, C; Wu, K; Abrahams, I; Yan, H; Knight, MM; Humphreys, CJ; Su, L (2020-09-22)Semiconductor surface patterning at the nanometer scale is crucial for high-performance optical, electronic, and photovoltaic devices. To date, surface nanostructures on organic-inorganic single-crystal perovskites have ... -
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
Kundys, D; Sutherland, D; Davies, MJ; Oehler, F; Griffiths, J; Dawson, P; Kappers, MJ; Humphreys, CJ; Schulz, S; Tang, F (2016) -
Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys
Holec, D; Rachbauer, R; Kiener, D; Cherns, PD; Costa, PMFJ; McAleese, C; Mayrhofer, PH; Humphreys, CJ (2011-04-20) -
Wafer-Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light-Emitting Diodes
Weng, Z; Dixon, SC; Lee, LY; Humphreys, CJ; Guiney, I; Fenwick, O; Gillin, WP (2022) -
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)
Weng, Z; Dixon, SC; Lee, LY; Humphreys, CJ; Guiney, I; Fenwick, O; Gillin, WP (2022-02-05) -
What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
Robin, Y; Pristovsek, M; Amano, H; Oehler, F; Oliver, RA; Humphreys, CJ (AIP Publishing LLC, 2018-11-14)The full width at half maximum (FWHM) of the luminescence of visible InGaN quantum well (QW) based emitters increases with wavelength. This broadening of the luminescence decreases the color saturation from 100% to about ... -
X-ray characterisation of the basal stacking fault densities of (1122) GaN
Pristovsek, M; Frentrup, M; Zhu, T; Kusch, G; Humphreys, CJ (2021)