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Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
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School of Engineering and Materials Science
Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
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School of Engineering and Materials Science
School of Engineering and Materials Science
Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
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Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
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Accepted version (3.194Mb)
Volume
98
DOI
10.1103/PhysRevB.98.155301
Journal
PHYSICAL REVIEW B
Issue
15
ISSN
2469-9950
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Authors
Christian, GM; Schulz, S; Rappers, MJ; Humphreys, CJ; Oliver, RA; Dawson, P
URI
http://qmro.qmul.ac.uk/xmlui/handle/123456789/49372
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School of Engineering and Materials Science
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