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dc.contributor.authorZaman, AMen_US
dc.contributor.authorSaito, Yen_US
dc.contributor.authorLu, Yen_US
dc.contributor.authorKholid, FNen_US
dc.contributor.authorAlmond, NWen_US
dc.contributor.authorBurton, OJen_US
dc.contributor.authorAlexander-Webber, Jen_US
dc.contributor.authorHofmann, Sen_US
dc.contributor.authorMitchell, Ten_US
dc.contributor.authorGriffiths, JDPen_US
dc.contributor.authorBeere, HEen_US
dc.contributor.authorRitchie, DAen_US
dc.contributor.authorMikhaylovskiy, RVen_US
dc.contributor.authorDegl'Innocenti, Ren_US
dc.date.accessioned2024-05-21T09:29:02Z
dc.date.issued2022-08-29en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttps://qmro.qmul.ac.uk/xmlui/handle/123456789/96982
dc.description.abstractWe report on the ultrafast modulation of a graphene loaded artificial metasurface realized on a SiO2/Si substrate by near-IR laser pump, detected via terahertz probe at the resonant frequency of ∼0.8 THz. The results have been acquired by setting the Fermi energy of graphene at the Dirac point via electrostatic gating and illuminating the sample with 40 fs pump pulses at different fluences, ranging from 0.9 to 0.018 mJ/cm2. The sub-ps conductivity rising time was attributed to the combined effect of the ultrafast generation of hot carriers in graphene and electron-hole generation in silicon. In correspondence of the resonance, it was possible to clearly distinguish a partial recovery time of ∼2 ps mainly due to carrier-phonon relaxation in graphene, superimposed to the > 1 ns recovery time of silicon. The resonant metasurface yielded ∼6 dB modulation depth in E-field amplitude at 0.8 THz for the range of fluences considered. These measurements set an upper limit for the reconfiguration speed achievable by graphene-based terahertz devices. At the same time, this work represents a great progress toward the realization of an ultrafast THz optoelectronic platform for a plethora of applications, ranging from the investigation of the ultrastrong light-matter regime to the next generation wireless communications.en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
dc.titleUltrafast modulation of a THz metamaterial/graphene array integrated deviceen_US
dc.typeArticle
dc.rights.holder© 2022 Author(s).
dc.identifier.doi10.1063/5.0104780en_US
pubs.issue9en_US
pubs.notesNot knownen_US
pubs.publication-statusPublisheden_US
pubs.volume121en_US
rioxxterms.funderDefault funderen_US
rioxxterms.identifier.projectDefault projecten_US


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