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Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

dc.contributor.authorChristian, GMen_US
dc.contributor.authorSchulz, Sen_US
dc.contributor.authorRappers, MJen_US
dc.contributor.authorHumphreys, CJen_US
dc.contributor.authorOliver, RAen_US
dc.contributor.authorDawson, Pen_US
dc.date.accessioned2018-10-30T16:10:04Z
dc.date.issued2018-10-02en_US
dc.date.submitted2018-10-24T11:41:22.821Z
dc.identifier.issn2469-9950en_US
dc.identifier.otherARTN 155301en_US
dc.identifier.urihttp://qmro.qmul.ac.uk/xmlui/handle/123456789/49372
dc.relation.ispartofPHYSICAL REVIEW Ben_US
dc.titleRecombination from polar InGaN/GaN quantum well structures at high excitation carrier densitiesen_US
dc.typeArticle
dc.rights.holder© 2018 American Physical Society
dc.identifier.doi10.1103/PhysRevB.98.155301en_US
pubs.author-urlhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000446296600004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6aen_US
pubs.issue15en_US
pubs.notesNot knownen_US
pubs.publication-statusPublisheden_US
pubs.volume98en_US


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