| dc.contributor.author | Pirabul, K | |
| dc.contributor.author | Zhao, Q | |
| dc.contributor.author | Pan, Z | |
| dc.contributor.author | Liu, H | |
| dc.contributor.author | Itoh, M | |
| dc.contributor.author | Izawa, K | |
| dc.contributor.author | Kawai, M | |
| dc.contributor.author | Crespo‐Otero, R | |
| dc.contributor.author | Di Tommaso, D | |
| dc.contributor.author | Nishihara, H | |
| dc.date.accessioned | 2024-04-26T09:54:51Z | |
| dc.date.available | 2024-04-26T09:54:51Z | |
| dc.date.issued | 2024-04 | |
| dc.identifier.issn | 1613-6810 | |
| dc.identifier.uri | https://qmro.qmul.ac.uk/xmlui/handle/123456789/96468 | |
| dc.description.abstract | In article number 2306325, Zheng-Ze Pan, Devis Di Tommaso, Hirotomo Nishihara, and co-workers tackle the surface inertness of SiO2 on graphene coating over chemical vapor deposition via the pre-grafting of trimethyl silane (TMS) groups on the pristine SiO2 surface. TMS-grafted SiO2 facilitates the graphene growth via the in-situ formed Si radicals that catalyze CH4 dissociation. This provides insights on the graphene growth chemistries, promoting the synthesis of tailored graphene-based materials. | en_US |
| dc.publisher | Wiley | en_US |
| dc.relation.ispartof | Small | |
| dc.rights | This is a pre-copyedited, author-produced version accepted for publication in Small following peer review. The version of record is available at https://onlinelibrary.wiley.com/doi/10.1002/smll.202470125 | |
| dc.title | Silicon Radical‐Induced CH4 Dissociation for Uniform Graphene Coating on Silica Surface (Small 16/2024) | en_US |
| dc.type | Article | en_US |
| dc.rights.holder | © 2024 Wiley-VCH GmbH | |
| dc.identifier.doi | 10.1002/smll.202470125 | |
| pubs.issue | 16 | en_US |
| pubs.notes | Not known | en_US |
| pubs.volume | 20 | en_US |
| rioxxterms.funder | Default funder | en_US |
| rioxxterms.identifier.project | Default project | en_US |
