Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy

dc.contributor.author	Bollet, F	en_US
dc.contributor.author	Gillin, WP	en_US
dc.contributor.author	Hopkinson, M	en_US
dc.contributor.author	Gwilliam, R	en_US
dc.date.accessioned	2013-07-02T13:28:26Z
dc.date.issued	2005-01-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.other	013536
dc.identifier.other	013536
dc.identifier.other	013536
dc.identifier.other	013536	en_US
dc.identifier.other	013536	en_US
dc.identifier.other	013536	en_US
dc.identifier.uri	http://qmro.qmul.ac.uk/xmlui/handle/123456789/4041
dc.description	Article copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The article appeared in Journal of Applied Physics 97, 013536 (2005) and may be found at <http://jap.aip.org/resource/1/japiau/v97/i1/p013536_s1>.
dc.format.extent	? - ?	en_US
dc.relation.ispartof	J APPL PHYS	en_US
dc.subject	QUANTUM-WELL STRUCTURES	en_US
dc.subject	HETEROSTRUCTURES	en_US
dc.subject	DIFFUSION	en_US
dc.title	Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy	en_US
dc.type	Article
dc.identifier.doi	10.1063/1.1825613	en_US
pubs.issue	1	en_US
pubs.notes	Not known	en_US
pubs.volume	97	en_US