Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy
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Volume
97
Pagination
? - ?
DOI
10.1063/1.1825613
Journal
J APPL PHYS
Issue
ISSN
0021-8979
Metadata
Show full item recordAuthors
Bollet, F; Gillin, WP; Hopkinson, M; Gwilliam, RCollections
- Condensed Matter Physics [107]