dc.contributor.author | GRASSO, S | en_US |
dc.date.accessioned | 2016-04-22T13:46:50Z | |
dc.date.available | 2014-08-17 | en_US |
dc.date.issued | 2015-01-01 | en_US |
dc.identifier.issn | 1873-3956 | en_US |
dc.identifier.uri | http://qmro.qmul.ac.uk/xmlui/handle/123456789/12008 | |
dc.description.abstract | Ultra High Temperature SPS (UHTSPS) was used to sinter pure α-SiC at 2450 ᵒC. Such a high temperature and partial vacuum conditions promoted SiC sublimation and condensation reactions. In the presence of an electric field, materials with graded porosity could be produced by using UHTSPS. At high temperature, the condensation of the gaseous species was controlled by the polarity of the applied electric field. Preferential condensation of SiC occurred on the negative electrode (cooler surface) due to the Peltier effect associated with the n-type thermoelectric behaviour of SiC. In absence of an electric field, condensation was driven by gravity and it resulted in dense SiC monoliths. | en_US |
dc.description.sponsorship | S.G. was supported by Grant no. EP/K008749/1 (Material Systems for Extreme Environments) from Engineering and Physical Sciences Research Council (EPSRC). T.S. was supported by FP7 2007–2013 (ADMACOM) a European Community׳s 7th framework Programme. | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartof | Ceramics International | en_US |
dc.rights | “The final publication is available at http://www.sciencedirect.com/science/article/pii/S0272884214012991” | |
dc.title | Ultra-high temperature spark plasma sintering of α-SiC | en_US |
dc.type | Article | |
dc.rights.holder | Copyright © 2014 Elsevier Ltd and Techna Group S.r.l. | |
pubs.notes | Not known | en_US |
pubs.publication-status | Published | en_US |
dcterms.dateAccepted | 2014-08-17 | en_US |