dc.contributor.author | Sun, YW | en_US |
dc.contributor.author | Liu, W | en_US |
dc.contributor.author | Hernandez, I | en_US |
dc.contributor.author | Gonzalez, J | en_US |
dc.contributor.author | Rodriguez, F | en_US |
dc.contributor.author | Dunstan, DJ | en_US |
dc.contributor.author | Humphreys, CJ | en_US |
dc.date.accessioned | 2019-08-28T10:46:59Z | |
dc.date.available | 2019-08-16 | en_US |
dc.date.issued | 2019-09-25 | en_US |
dc.identifier.issn | 0031-9007 | en_US |
dc.identifier.other | ARTN 135501 | en_US |
dc.identifier.uri | https://qmro.qmul.ac.uk/xmlui/handle/123456789/59359 | |
dc.relation.ispartof | PHYSICAL REVIEW LETTERS | en_US |
dc.rights | This is a pre-copyedited, author-produced version of an article accepted for publication in Physical Review Letters following peer review. The version of record is available https://journals.aps.org/prl/accepted/4b077Yf9Q051846ab8ea22a839e77eeea913dbf09 | |
dc.title | 3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite? | en_US |
dc.type | Article | |
dc.rights.holder | © 2019 American Physical Society | |
dc.identifier.doi | 10.1103/PhysRevLett.123.135501 | en_US |
pubs.author-url | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000487746000002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6a | en_US |
pubs.issue | 13 | en_US |
pubs.notes | Not known | en_US |
pubs.publication-status | Published | en_US |
pubs.volume | 123 | en_US |
rioxxterms.funder | Default funder | en_US |
rioxxterms.identifier.project | Default project | en_US |
qmul.funder | Replacing Indium Tin Oxide (ITO) with next-generation graphene in electronic devices (GRAPHIC)::Technology Strategy Board | en_US |