Show simple item record

dc.contributor.authorSun, YWen_US
dc.contributor.authorLiu, Wen_US
dc.contributor.authorHernandez, Ien_US
dc.contributor.authorGonzalez, Jen_US
dc.contributor.authorRodriguez, Fen_US
dc.contributor.authorDunstan, DJen_US
dc.contributor.authorHumphreys, CJen_US
dc.date.accessioned2019-08-28T10:46:59Z
dc.date.available2019-08-16en_US
dc.date.issued2019-09-25en_US
dc.identifier.issn0031-9007en_US
dc.identifier.otherARTN 135501en_US
dc.identifier.urihttps://qmro.qmul.ac.uk/xmlui/handle/123456789/59359
dc.relation.ispartofPHYSICAL REVIEW LETTERSen_US
dc.rightsThis is a pre-copyedited, author-produced version of an article accepted for publication in Physical Review Letters following peer review. The version of record is available https://journals.aps.org/prl/accepted/4b077Yf9Q051846ab8ea22a839e77eeea913dbf09
dc.title3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite?en_US
dc.typeArticle
dc.rights.holder© 2019 American Physical Society
dc.identifier.doi10.1103/PhysRevLett.123.135501en_US
pubs.author-urlhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000487746000002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6aen_US
pubs.issue13en_US
pubs.notesNot knownen_US
pubs.publication-statusPublisheden_US
pubs.volume123en_US
rioxxterms.funderDefault funderen_US
rioxxterms.identifier.projectDefault projecten_US
qmul.funderReplacing Indium Tin Oxide (ITO) with next-generation graphene in electronic devices (GRAPHIC)::Technology Strategy Boarden_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record