The activation energy for GaAs/AlGaAs interdiffusion
4842 - 4846
Journal of Applied Physics
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We present data of the interdiffusion coefficient of AlGaAs/GaAs over the temperature range 750-1150 °C, and obtain E A and D 0 values of 3.6± 0.2 eV and 0.2 (with an uncertainty from 0.04 to 1.1) cm 2 /s, respectively. These data are compared with those from the literature taken under a wide range of experimental conditions. We show that despite the range of activation energies quoted in the literature all the data can be described using a single activation energy. Using this value of E A to fit the published data and then determining D 0 for each data point we find that the published data fall into two clusters. One, for samples annealed under a gallium rich overpressure and a second for As rich or capped anneals. This result can be explained by the diffusion in all cases being governed by a single mechanism, vacancy-controlled second-nearest-neighbor hopping. © 1997 American Institute of Physics.