Intermixing in GaAsSb/GaAs single quantum wells
4017 - 4019
Journal of Applied Physics
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Photoluminescence coupled with repetitive thermal annealing has been used to study the interdiffusion process in a 10 nm GaAs1-xSbx/GaAs single quantum well. The diffusion equations and the Schrödinger equation were solved numerically to obtain the composition profile and the n = 1 electron to heavy-hole transition energies in the intermixed quantum well, respectively. The intermixing process was shown to obey Fick's second law. © 1998 American Institute of Physics.