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Effect of excited states and applied magnetic fields on the measured hole mobility in an organic semiconductor

dc.contributor.authorSong, JYen_US
dc.contributor.authorStingelin, Nen_US
dc.contributor.authorDrew, AJen_US
dc.contributor.authorKreouzis, Ten_US
dc.contributor.authorGillin, WPen_US
dc.date.accessioned2013-07-05T14:41:14Z
dc.date.issued2010-08-20en_US
dc.identifier.issn1098-0121en_US
dc.identifier.other085205
dc.identifier.other085205
dc.identifier.other085205
dc.identifier.other085205
dc.identifier.other085205en_US
dc.identifier.other085205en_US
dc.identifier.other085205en_US
dc.identifier.other085205en_US
dc.identifier.urihttp://qmro.qmul.ac.uk/xmlui/handle/123456789/4107
dc.descriptionCopyright 2010 by the American Physical Society. Article is available at <http://link.aps.org/doi/10.1103/PhysRevB.82.085205>.
dc.format.extent? - ?en_US
dc.relation.ispartofPHYS REV Ben_US
dc.subjectROOM-TEMPERATUREen_US
dc.subjectELECTROLUMINESCENT DIODESen_US
dc.subjectLARGE MAGNETORESISTANCEen_US
dc.subjectSANDWICH DEVICESen_US
dc.titleEffect of excited states and applied magnetic fields on the measured hole mobility in an organic semiconductoren_US
dc.typeArticle
dc.identifier.doi10.1103/PhysRevB.82.085205en_US
pubs.issue8en_US
pubs.notesNot knownen_US
pubs.volume82en_US


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