| dc.contributor.author | Gillin, WP | en_US |
| dc.date.accessioned | 2013-07-03T15:29:05Z | |
| dc.date.issued | 1999-01-15 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.uri | http://qmro.qmul.ac.uk/xmlui/handle/123456789/4068 | |
| dc.description | Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 85, 790 (1999) and may be found at <http://jap.aip.org/resource/1/japiau/v85/i2/p790_s1>. | |
| dc.format.extent | 790 - 793 | en_US |
| dc.relation.ispartof | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.title | Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures | en_US |
| dc.type | Article | |
| dc.identifier.doi | 10.1063/1.369160 | en_US |
| pubs.author-url | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000077792600021&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6a | en_US |
| pubs.issue | 2 | en_US |
| pubs.notes | Not known | en_US |
| pubs.publication-status | Published | en_US |
| pubs.volume | 85 | en_US |
