Reduced hole mobility due to the presence of excited states in poly-(3-hexylthiophene)

dc.contributor.author	Song, JY	en_US
dc.contributor.author	Stingelin, N	en_US
dc.contributor.author	Gillin, WP	en_US
dc.contributor.author	Kreouzis, T	en_US
dc.date.accessioned	2013-07-03T11:17:43Z
dc.date.issued	2008-12-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.other	233306
dc.identifier.other	233306
dc.identifier.other	233306
dc.identifier.other	233306	en_US
dc.identifier.other	233306	en_US
dc.identifier.uri	http://qmro.qmul.ac.uk/xmlui/handle/123456789/4063
dc.description	Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 93, 233306 (2008) and may be found at <http://apl.aip.org/resource/1/applab/v93/i23/p233306_s1>.
dc.format.extent	? - ?	en_US
dc.relation.ispartof	APPL PHYS LETT	en_US
dc.subject	current density	en_US
dc.subject	hole mobility	en_US
dc.subject	organic semiconductors	en_US
dc.subject	polymers	en_US
dc.subject	semiconductor devices	en_US
dc.subject	semiconductor thin films	en_US
dc.subject	thin film devices	en_US
dc.title	Reduced hole mobility due to the presence of excited states in poly-(3-hexylthiophene)	en_US
dc.type	Article
dc.identifier.doi	10.1063/1.3049129	en_US
pubs.issue	23	en_US
pubs.notes	Not known	en_US
pubs.volume	93	en_US