Ferromagnetic-organic interfacial states and their role on low voltage current injection in tris-8-hydroxyquinloline (Alq<inf>3</inf>) organic spin valves
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© 2014 AIP Publishing LLC.Organic Spin Valves (OSVs) operate at small bias (<100mV) when carrier injection should not occur due to injection barriers and in built potentials. We explore the consequences of hybrid-interface states between a ferromagnetic electrode and an organic semiconductor in OSV carrier injection. By temperature-dependent Dark Injection measurements, we observe hole trapping due to these filled states and measure a low thermal activation energy (∼100meV) of the carrier density within OSVs. The small injection barrier is consistent with a significant interfacial potential, due to hybrid-interface state filling, overcoming the injection barrier due to the electrode work function - transport level mismatch.