dc.contributor.author | Khreis, OM | en_US |
dc.contributor.author | Homewood, KP | en_US |
dc.contributor.author | Gillin, WP | en_US |
dc.date.accessioned | 2013-07-05T09:43:54Z | |
dc.date.issued | 1998-07-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://qmro.qmul.ac.uk/xmlui/handle/123456789/4100 | |
dc.description | Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 84, 232 (1998) and may be found at <http://jap.aip.org/resource/1/japiau/v84/i1/p232_s1>. | |
dc.format.extent | 232 - 236 | en_US |
dc.relation.ispartof | JOURNAL OF APPLIED PHYSICS | en_US |
dc.title | Interdiffusion in InGaAs/GaAs: The effect of growth conditions | en_US |
dc.type | Article | |
dc.identifier.doi | 10.1063/1.368079 | en_US |
pubs.author-url | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000075258100031&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6a | en_US |
pubs.issue | 1 | en_US |
pubs.notes | Not known | en_US |
pubs.publication-status | Published | en_US |
pubs.volume | 84 | en_US |