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dc.contributor.authorKhreis, OMen_US
dc.contributor.authorHomewood, KPen_US
dc.contributor.authorGillin, WPen_US
dc.date.accessioned2013-07-05T09:43:54Z
dc.date.issued1998-07-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://qmro.qmul.ac.uk/xmlui/handle/123456789/4100
dc.descriptionCopyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 84, 232 (1998) and may be found at <http://jap.aip.org/resource/1/japiau/v84/i1/p232_s1>.
dc.format.extent232 - 236en_US
dc.relation.ispartofJOURNAL OF APPLIED PHYSICSen_US
dc.titleInterdiffusion in InGaAs/GaAs: The effect of growth conditionsen_US
dc.typeArticle
dc.identifier.doi10.1063/1.368079en_US
pubs.author-urlhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000075258100031&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6aen_US
pubs.issue1en_US
pubs.notesNot knownen_US
pubs.organisational-group/Queen Mary University of London
pubs.organisational-group/Queen Mary University of London/Faculty of Science & Engineering
pubs.organisational-group/Queen Mary University of London/Faculty of Science & Engineering/Physics and Astronomy
pubs.publication-statusPublisheden_US
pubs.volume84en_US


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