Characterization of interdiffusion around miscibility gap of lattice matched InGaAs/InP quantum wells by high resolution x-ray diffraction

dc.contributor.author	Bollet, F	en_US
dc.contributor.author	Gillin, WP	en_US
dc.date.accessioned	2013-07-02T14:08:26Z
dc.date.issued	2007-01-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.other	013502
dc.identifier.other	013502
dc.identifier.other	013502
dc.identifier.other	013502	en_US
dc.identifier.other	013502	en_US
dc.identifier.uri	http://qmro.qmul.ac.uk/xmlui/handle/123456789/4043
dc.description	Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 101, 013502 (2007) and may be found at <http://jap.aip.org/resource/1/japiau/v101/i1/p013502_s1>.
dc.format.extent	? - ?	en_US
dc.relation.ispartof	J APPL PHYS	en_US
dc.subject	COHERENCY STRAIN	en_US
dc.subject	ALLOYS	en_US
dc.subject	HETEROSTRUCTURES	en_US
dc.subject	DIFFUSION	en_US
dc.title	Characterization of interdiffusion around miscibility gap of lattice matched InGaAs/InP quantum wells by high resolution x-ray diffraction	en_US
dc.type	Article
dc.identifier.doi	10.1063/1.2404784	en_US
pubs.issue	1	en_US
pubs.notes	Not known	en_US
pubs.volume	101	en_US