<p>Electrical field dependence of permittivity in (1 − <italic>x</italic>)AN-<italic>x</italic>BZN ceramics. Arrow directions down, up and down then up are related to domain switching, field induced transition and domain ...

Ultrafast polarization switching is being considered for the next generation of ferroelectric-based devices. Recently, the dynamics of the field-induced transitions associated with this switching have been difficult to ...

The development of noble-metal-free co-catalysts is seen as a viable strategy for improving the performance of semiconductor photocatalysts. Although the photocatalytic efficiency of ferroelectrics is typically low, it can ...

The sequence of transitions between different phases of BiNbO4 has been thoroughly investigated and clarified using thermal analysis, high-resolution neutron diffraction, and Raman spectroscopy. The theoretical optical ...

Ferroelectric domain walls (DWs) are important nanoscale interfaces between two domains. It is widely accepted that ferroelectric domain walls work idly at terahertz (THz) frequencies, consequently discouraging efforts to ...

There has been recently a great progress in the development of dielectric capacitors for high temperature electronic applications. The design of lead-free ceramics with high dielectric permittivity, low dielectric loss and ...

The development of lead-free ferroelectric ceramics exhibiting a high Curie point is regarded as a key aspect of improving the overall performance of high temperature sensing devices. Two-layer Dion-Jacobson phases have ...