| dc.contributor.advisor | This is a pre-copyedited, author-produced version of an article accepted for publication in Physical Review Letters following peer review. | |
| dc.contributor.author | DREW, AJ | en_US |
| dc.contributor.author | Miao | en_US |
| dc.contributor.author | Murahari | en_US |
| dc.contributor.author | Yokoyama | en_US |
| dc.date.accessioned | 2017-11-28T14:43:58Z | |
| dc.date.available | 2017-11-09 | en_US |
| dc.date.issued | 2017-11-29 | en_US |
| dc.date.submitted | 2017-11-16T13:52:16.246Z | |
| dc.identifier.issn | 0031-9007 | en_US |
| dc.identifier.uri | http://qmro.qmul.ac.uk/xmlui/handle/123456789/28976 | |
| dc.publisher | American Physical Society | en_US |
| dc.relation.ispartof | Physical Review Letters | en_US |
| dc.title | A new method for measuring excess carrier lifetime in bulk silicon: Photoexcited muon spin spectroscopy | en_US |
| dc.type | Article | |
| dc.rights.holder | © 2017 American Physical Society | |
| dc.identifier.doi | 10.1103/PhysRevLett.119.226601 | en_US |
| pubs.notes | Not known | en_US |
| pubs.publication-status | Published | en_US |
| dcterms.dateAccepted | 2017-11-09 | en_US |
