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dc.contributor.authorGu, Hen_US
dc.contributor.authorChang, Sen_US
dc.contributor.authorLu, Hen_US
dc.contributor.authorHolford, DFen_US
dc.contributor.authorZhang, Ten_US
dc.contributor.authorHu, Jen_US
dc.contributor.authorGillin, WPen_US
dc.contributor.authorKreouzis, Ten_US
dc.date.accessioned2016-06-23T12:27:50Z
dc.date.available2016-05-05en_US
dc.date.issued2016-05-16en_US
dc.date.submitted2016-05-27T14:28:13.438Z
dc.identifier.issn0003-6951en_US
dc.identifier.otherARTN 203301en_US
dc.identifier.otherARTN 203301en_US
dc.identifier.urihttp://qmro.qmul.ac.uk/xmlui/handle/123456789/13043
dc.descriptionreceived: 2016-01-10 accepted: 2016-05-05 published: 2016-05-17
dc.description.sponsorshipThe work was supported by the China Scholarship Council and Engineering (HG, SC, HL, TZ, JH), National Science Foundation of China, 61574095, and Physical Sciences Research Council Grant Nos. EP/J50029X/1, EP/K004484/1, and EP/L020114/1.en_US
dc.relation.ispartofAPPLIED PHYSICS LETTERSen_US
dc.rights“The final publication is available at http://scitation.aip.org/content/aip/journal/apl/108/20/10.1063/1.4950859”
dc.titleImpurity effects on charge transport and magnetoconductance in a single layer poly(3-hexyl-thiophene) deviceen_US
dc.typeArticle
dc.rights.holderWebsite © 2016 AIP Publishing LLC.
dc.identifier.doi10.1063/1.4950859en_US
pubs.author-urlhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000377024000049&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=612ae0d773dcbdba3046f6df545e9f6aen_US
pubs.issue20en_US
pubs.notesNot knownen_US
pubs.publication-statusPublisheden_US
pubs.volume108en_US


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